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6MBI150U2B-060
IGBT MODULE (U series) 600V / 150A
IGBT Modules
Features
* Low VCE(sat) * Compact Package * P.C. Board Mount Module
Applications
* Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless otherwise specified)
I Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICP -IC -IC pulse PC Tj Tstg Viso Condition Rating 600 20 150 300 150 300 500 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A
Continuous 1ms
Collector power disspation Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
1 device
AC : 1 minute
W C C V V N*m
*1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done.
IGBT Module
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=150mA Tj=25C VGE=15V Tj=125C Ic=150A Tj=25C Tj=125C VGE=0V, VCE=10V, f=1MHz VCC=300V IC=150A VGE=15V RG= 24 VGE= 0 V IF=150A Tj=25C Tj=125C Tj=25C Tj=125C Min. 6.2 465 3305
6MBI150U2B-060
Inverter
Input capacitance Turn-on time
Turn-off time Forward on voltage
Thermistor
Reverse recovery time of FRD Lead resistance, terminal-chip * Resistance B value
IF=150A T=25C T=100C T=25/50C
Characteristics Typ. Max. 1.0 200 6.7 7.7 2.30 2.60 2.55 1.80 2.05 12 0.40 1.20 0.22 0.60 0.16 0.48 1.20 0.07 0.45 2.10 2.45 2.15 1.60 1.65 0.35 3.4 5000 495 3375 520 3450
Unit mA nA V V
nF s
V
s m K
* Biggest internal terminal resistance among arm.
Thermal resistance Characteristics
Item Thermal resistance ( 1 device ) Symbol Rth(j-c) Condition Min. IGBT FWD Contact thermal resistance * Rth(c-f) With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Characteristics Typ. Max. 0.05 0.25 0.48 Unit
C/W
Equivalent Circuit Schematic
30,31,32
16,17,18
19
20
1 2 U 27,28,29 3 4 33,34,35
5 6
9 10 V 24,25,26 W 21,22,23
7 8
11 12 13,14,15
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
400 400
6MBI150U2B-060
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip
VGE=20V 15V 12V Collector current : Ic [A] Collector current : Ic [A] 300 10V 200 300
VGE=20V15V
12V 10V
200
100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
100 8V
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
400 Collector - Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
10
Collector current : Ic [A]
300
Tj=25C Tj=125C
8
6
200
4 Ic=300A Ic=150A Ic= 75A
100
2
0 0 1 2 3 4
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
100.0 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [ V ] 500
Dynamic Gate charge (typ.) Vcc=300V, Ic=150A, Tj= 25C
25 [V] 400 20 Gate - Emitter voltage : VGE 300 VGE 200 10 15 100 VCE 5 0 0 0 200 400 600 800 Gate charge : Qg [ nC ]
Cies 10.0
Cres 1.0 Coes
0.1 0 10 20 30
Collector-Emitter voltage : VCE [V]
IGBT Module
6MBI150U2B-060
Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj= 25C
10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000
Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj=125C
1000 ton toff tr 100
1000
toff ton tr
tf
100
tf
10 0 50 100 150 200 250 300 Collector current : Ic [ A ]
10 0 50 100 150 200 250 300 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=15V, Tj= 25C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 15
Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24
Eoff(125C) Eon(125C) 10 Eoff(25C) Eon(25C)
1000 ton toff 100 tf
tr
5
Err(125C) Err(25C) 0 0 100 200 300
10 1 10 Gate resistance : Rg [ ] 100
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=15V, Tj= 125C
20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 400
Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 24 ,Tj <= 125C
10
Collector current : Ic [ A ] 10 100
15
300
200
Eoff 5 Eon Err 0 1 Gate resistance : Rg [ ]
100
0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ]
IGBT Module
6MBI150U2B-060
Forward current vs. Forward on voltage (typ.) chip
400 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1000
Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=24
Forward current : IF [ A ]
300 Tj=25C Tj=125C 200
trr (125C) 100 trr (25C) Irr (125C) Irr (25C)
100
0 0 1 2 3 Forward on voltage : VF [ V ]
10 0 100 200 300 Forward current : IF [ A ]
Transient thermal resistance (max.)
10.00 Thermal resistanse : Rth(j-c) [ C/W ] 100
Temperature characteristic (typ.)
Resistance : R [ k ] 1.000
1.00
FWD IGBT
10
0.10
1
0.01 0.001
0.1 0.010 0.100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Pulse width : Pw [ sec ]
Temperature [C ]
IGBT Module
Outline Drawings, mm
6MBI150U2B-060
(
) shows reference dimension.

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